发明名称 Nonvolatile memory device and nonvolatile memory system and random data read method thereof
摘要 A random data reading method of a nonvolatile memory device includes receiving an initial seed corresponding to a selected page of the nonvolatile memory device and relative location information of read-requested random data in the selected page. The method further includes generating a seed for randomizing the random data by subjecting the initial seed and the location information to a finite field arithmetic operation, and de-randomizing the random data based on a random sequence generated from the seed.
申请公布号 US9400750(B2) 申请公布日期 2016.07.26
申请号 US201414472072 申请日期 2014.08.28
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Kijun;Kim Jaehong;Lim Sejin;Chung Jungsoo
分类号 G06F12/00;G06F13/00;G06F13/28;G06F12/06;G06F7/58;G11C16/00;G06F11/10;G06F12/02;G11C7/10;H03M13/03 主分类号 G06F12/00
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method of reading data in a nonvolatile memory system that comprises a plurality of pages including a first page, the first page including a plurality of sectors, the plurality of sectors including a first sector and a second sector, an address of the first sector preceding an address of the second sector, the method comprising: receiving a read request for reading data in the second sector, the read request including a page address corresponding to the first page and a sector address corresponding to the second sector; generating a first seed based on the page address; generating a second seed based on the first seed and on the sector address; generating a second random sequence corresponding to the data in the second sector based on the second seed; and generating output data based on the second random sequence and on the data in the second sector, wherein a first random sequence corresponding to data in the first sector is not generated in response to the read request for reading the data in the second sector.
地址 Suwon-si, Gyeonggi-do KR