Memory devices and methods of operating the same

摘要

Methods of operating a memory device include; applying a first set write voltage to a selected first signal line connected to a selected memory cell, applying a first inhibition voltage to non-selected first signal lines connected to non-selected memory cells, and controlling a first voltage of a selected second signal line connected to the selected memory cell to be less than the first set write voltage, and a difference between the first inhibition voltage and the first voltage is less than a threshold voltage of the selection element.

主权项

1. A method of operating a memory device including memory cells disposed at respective intersections of bit lines and word lines, wherein each memory cell includes a variable resistor and a selection element, the method comprising:
during a first pre-charge mode, applying a pre-charge voltage to a selected bit line connected to a selected memory cell among the memory cells, non-selected bit lines, and a selected word line connected to the selected memory cell; during a second pre-charge mode following the first pre-charge mode, reducing the pre-charge voltage applied to the non-selected bit lines to a first inhibition voltage; and during an active mode following the second pre-charge mode, applying a first set write voltage greater than the pre-charge voltage to the selected bit line and reducing the pre-charge voltage applied to the selected word line to a voltage higher than the first inhibition voltage.