| 摘要 |
The present invention relates to chemical mechanical polishing apparatus and method. The method for chemically and mechanically polishing a polishing layer of a wafer formed of metal comprises: a first polishing step of positioning the wafer on the bottom of a polishing head, rotates a polishing surface of the wafer in a state of press contact with a polishing pad while supplying slurry to any one or more of the polishing pad and the wafer, to perform chemical mechanical polishing of the polishing surface; a thickness distribution measurement step of measuring polishing layer thickness distribution of the wafer during the first polishing step; a polishing thickness deviation adjustment step of mitigating polishing layer thickness deviation of the wafer measured from the thickness distribution measurement step during the first polishing step; and a second polishing step of discontinuing, when the polishing thickness reaches a predetermined first polishing thickness by the first polishing step, the thickness distribution measurement step and the polishing thickness deviation adjustment step, and performing polishing until the polishing thickness reaches a target thickness. Finally, it is possible to form the wafer polishing layer thickness distribution after completing the chemical mechanical polishing process to be more accurately desired thickness distribution. |
