发明名称 STACKED SEMICONDUCTOR LASER DIODE
摘要 The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate ( 1 ). A first diode laser ( 12 ) is arranged on the substrate ( 1 ), and a second diode laser ( 13 ) is arranged on the first diode laser ( 12 ). Between the first diode laser ( 12 ) and the second diode laser ( 13 ) there is a contact layer ( 6 ). The contact layer ( 6 ) comprises a first conductive layer ( 18 ) of a first conduction type and a second conductive layer ( 20 ) of a second conduction type and an interlayer ( 19 ) which is arranged between the first and second conductive layers ( 18, 20 ).
申请公布号 EP1374353(A2) 申请公布日期 2004.01.02
申请号 EP20010997871 申请日期 2001.11.20
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 BEHRINGER, MARTIN;EBELING, KARL;KNOEDL, THOMAS;LUFT, JOHANN
分类号 H01S5/32;H01S5/40 主分类号 H01S5/32
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