| 摘要 |
The present invention provides a drive circuit wherein malfunctions are prevented. The drive circuit is provided with a set-side level shift circuit and a reset-side level shift circuit, each having: an input transistor; and a series transistor section, which includes a first MOS transistor and a second MOS transistor connected in series. The first MOS transistors perform complimentary operations with regard to one another. The set-side level shift circuit and the reset-side level shift circuit are also respectively provided with: a set-side buffer, which compares the level of the set electric potential to a threshold value in accordance with a reference electric potential, and which controls the reset-side second MOS transistor; and a reset-side buffer, which compares the level of the reset electric potential to a threshold value in accordance with the reference electric potential, and which controls the set-side second MOS transistor. |
