发明名称 基板貫通ビアを集積回路の中間工程層に組み込むこと
摘要 A semiconductor wafer has an integrated through substrate via (TSV). The semiconductor wafer includes a substrate. A dielectric layer may be formed on a first side of the substrate. A through substrate via may extend through the dielectric layer and the substrate. The through substrate via may include a conductive material and an isolation layer. The isolation layer may at least partially surround the conductive material. The isolation layer may have a tapered portion.
申请公布号 JP6012763(B2) 申请公布日期 2016.10.25
申请号 JP20140552358 申请日期 2013.01.12
申请人 クアルコム,インコーポレイテッド 发明人 ヴィディヤ・ラマチャンドラ;シーチュン・グ
分类号 H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/3205
代理机构 代理人
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