| 发明名称 |
Tungsten Films by Organometallic or Silane Pre-Treatment of Substrate |
| 摘要 |
Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate. |
| 申请公布号 |
US2016336222(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615151612 |
申请日期 |
2016.05.11 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
Knapp David;Anthis Jeffrey W.;Fu Xinyu;Gandikota Srinivas |
| 分类号 |
H01L21/768;H01L23/535;H01L23/532 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A processing method comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate. |
| 地址 |
Santa Clara CA US |
