METHOD OF FORMING SEMICONDUCTOR STRUCTURE

摘要

A method of forming a semiconductor structure includes following steps. First of all, a plurality of mandrels is formed on a target layer. Next, a plurality of first liner is formed adjacent to two sides of the mandrels. Then, a plurality of second liners is formed adjacent to two sides of the first liners. After these, a plurality of third liners is formed adjacent to two sides of the second liners. Finally, the mandrels and the second liners are simultaneously removed.

主权项

1. A method of forming a semiconductor structure, comprising:
forming a plurality of mandrels on a target layer; forming a first material layer covering the mandrels; performing an etching back process to remove the first material layer on top surfaces of the mandrels; after the etching back process, performing a chemical mechanical polishing process to further remove a portion of the first material layer to form a plurality of first liners adjacent to two sides of the mandrels; forming a plurality of second liners adjacent to two sides of the first liners; forming a plurality of third liners adjacent to two sides of the second liners; and simultaneously removing the mandrels and the second liners.