| 发明名称 |
Semiconductor Devices and Methods of Manufacture Thereof |
| 摘要 |
A method of manufacturing a semiconductor device may include: forming an opening in an insulating layer to expose a portion of a major surface of a substrate, the substrate comprising a first semiconductor material; forming a protrusion in the opening using a first epitaxial growth process, the protrusion comprising a first portion disposed in the opening and a second portion extending out of the opening, the protrusion comprising a second semiconductor material different from the first semiconductor material; and forming the second semiconductor material on sidewalls of the second portion of the protrusion using a second epitaxial growth process different from the first epitaxial growth process. |
| 申请公布号 |
US2016336177(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201514713952 |
申请日期 |
2015.05.15 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Holland Martin Christopher;Vellianitis Georgios |
| 分类号 |
H01L21/02;H01L21/311;H01L21/306;H01L29/06 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming an opening in an insulating layer to expose a portion of a major surface of a substrate, the substrate comprising a first semiconductor material; forming a protrusion in the opening using a first epitaxial growth process, the protrusion comprising a first portion disposed in the opening and a second portion extending out of the opening, the protrusion comprising a second semiconductor material different from the first semiconductor material; and forming a third portion on sidewalls of the second portion of the protrusion using a second epitaxial growth process different from the first epitaxial growth process, the third portion comprising the second semiconductor material. |
| 地址 |
Hsin-Chu TW |
