LITHOGRAPHY STACK AND METHOD

摘要

Lithography stack, intermediate semiconductor devices, and methods of fabrication are provided. The method includes obtaining an intermediate semiconductor device with a substrate, applying a spin on carbon layer over the substrate, and applying a hardmask layer over the spin on carbon layer. The intermediate semiconductor device includes a substrate, a spin on carbon layer over the substrate, and a hardmask layer over the spin on carbon layer. The lithography stack includes a spin on carbon layer, an invisible hardmask layer over the spin on carbon layer, and a photoresist layer over the invisible hardmask layer.

主权项

1. A method, comprising:
obtaining an intermediate semiconductor device, the device including a substrate; applying a spin on carbon layer over the substrate; applying a hardmask layer over the spin on carbon layer; applying a photoresist layer over the hardmask layer; patterning the photoresist layer to form a photoresist pattern layer; and assessing the photoresist pattern layer for critical dimension and overlay errors, if there are critical dimension and overlay errors removing the photoresist layer and applying a new photoresist layer over the hardmask layer.