| 发明名称 |
Control of ion angular distribution of ion beams with hidden deflection electrode |
| 摘要 |
A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam. |
| 申请公布号 |
US9514912(B2) |
申请公布日期 |
2016.12.06 |
| 申请号 |
US201414523428 |
申请日期 |
2014.10.24 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Biloiu Costel;Kurunczi Peter F.;Rockwell Tyler;Campbell Christopher;Singh Vikram;Radovanov Svetlana |
| 分类号 |
H01J37/08;H01J27/02;H01J37/32;H01J37/317 |
主分类号 |
H01J37/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing apparatus comprising:
an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first aperture and a second aperture, and a middle portion between the first aperture and second aperture, the first aperture and second aperture being configured to define a first ion beam and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent to the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify at least one of a mean angle of incidence of ions in the first ion beam in a first direction and in the second ion beam in a second direction different from said first direction and a range of angles of incidence centered around the mean angle of incidence in the first ion beam and the second ion beam. |
| 地址 |
Gloucester MA US |
