| 摘要 |
<p>PURPOSE:To reduce the cost of a scribing process by a method wherein a reaction preventing layer is formed on a scribe line drawn on the back surface of a semiconductor wafer, a back metal material is connected thereon and heated to turn into an alloy, and the part of the back metal material which does not yet react is removed so that the back surface of the water is exposed along the scribed line. CONSTITUTION:A reaction preventing layer 107 is formed on a scribe line 105 drawn on the back surface 103 of a semiconductor wafer 101 whereon a plurality of chip parts are patterned. This reaction preventing layer 107 is formed of a substance which does not yet react with a back metal material. Next, the back metal material 111 is connected on the whole of this back surface 103 and heated to turn into an alloy. Then, a part 111B of the back metal material 111 which does not yet react and the reaction preventing layer 107 are removed so that the back surface 103 of the wafer is exposed along the scribe line 105, and the semiconductor wafer 101 is cut along the scribe line 105, so that a groove 121 be formed in a prescribed depth from the surface of the water. Thereby blocking of a diamond cutter is prevented in scribing and thus the cost for a scribing process can be reduced.</p> |
