发明名称 |
Non-volatile memory device and fabrication method thereof |
摘要 |
A nonvolatile read-only memory device, wherein a word line is on a substrate and the word line includes a metal layer a polysilicon line. A trapping layer is further located between the word line and the substrate. A polysilicon protection line is formed over the substrate and the polysilicon protection line connects the word line and a grounded doped region in the substrate, wherein the resistance of the polysilicon protection line is higher than that of the word line.
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申请公布号 |
US6680227(B2) |
申请公布日期 |
2004.01.20 |
申请号 |
US20020134223 |
申请日期 |
2002.04.25 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
KUO TUNG-CHENG;LIU CHIEN-HUNG;PAN SHYI-SHUH;HUANG SHOU-WEI |
分类号 |
H01L21/336;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/792;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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