发明名称 SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE
摘要 A surface acoustic wave functional element is provided with a semiconductor layer on a piezoelectric substrate or piezoelectric thin film substrate and utilizes the interaction between surface acoustic waves propagated on the surface of the substrate and electrons in the semiconductor layer. The semiconductor layer is formed outside the propagating path of the surface acoustic waves and provided with a plurality of grating electrodes perpendicularly to the propagating path, an active layer, and a buffer layer lattice-matched with the active layer. Using this surface acoustic wave functional device, a surface acoustic wave amplifier with a high amplification degree at a practical low voltage is provided, and a surface acoustic wave convolver having such a high efficiency that has not been achieved so far, is provided.
申请公布号 WO9804040(A1) 申请公布日期 1998.01.29
申请号 WO1997JP02506 申请日期 1997.07.18
申请人 ASAHI KASEI KOGYO KABUSHIKI KAISHA;YAMANOUCHI, KAZUHIKO;ODAGAWA, HIROYUKI;SATO, WASUKE;KUZE, NAOHIRO;GOTO, HIROMASA 发明人 YAMANOUCHI, KAZUHIKO;ODAGAWA, HIROYUKI;SATO, WASUKE;KUZE, NAOHIRO;GOTO, HIROMASA
分类号 G06G7/195;H03H9/02;H03H9/145;(IPC1-7):H03H9/145;H03H9/72 主分类号 G06G7/195
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