| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is capable of uniform etching independently of the final circuit constitution, and can be applied to the manufacture of various FET circuits, HBT(hetero junction bipolar transistor) circuits, and HET(hot electron transistor) circuits. SOLUTION: A laminate formed by laminating specified semiconductor layers on a semiinsulating semiconductor substrate is prepared, and ions are implanted in a specified region containing a contact pad forming region. In this case, a conducting path for maintaining electric connection of a device forming region with the adjacent region is left. After the device forming process containing an etching process and a contact pad forming process, the conducting path is devided, and a device is made electrically independent of the peripheral region (device).
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