| 摘要 |
PURPOSE: A method for forming field emitter array of field emission display is provided to make lower voltage operation of device possible and to improve durability of emitter tip by forming silicide around silicon tip and simultaneously depositing metal film up to around tip by sputtering. CONSTITUTION: A disk oxidation film of a designated size is formed on the top of silicon substrate(1). Rough tip shape is formed by making an isotropic etching lower silicon substrate(1) as much as a designated depth considering above disk oxidation film as mask. Gate insulation film(7) of a designated thickness is formed on front surface of above structure except lower part of above disk oxidation film by incline deposition method using electron beam depositor. Gate metal is deposited on the top of whole structure. Tip is protruded by lift off process. Silicide is formed at the end part of above tip.
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