| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a gate electrode and a source/drain from being short-circuited and bridged, by stably and effectively performing a selective epitaxial growth(SEG) process. CONSTITUTION: A gate insulation layer(35) is formed on a semiconductor substrate(31). The gate electrode(36a) and a gate cap insulation layer are stacked in a predetermined region on the gate insulation layer. A low density impurity region is formed in the surface of the semiconductor substrate at both sides of the gate electrode. The first and second insulation layers are sequentially formed on the semiconductor substrate including the gate cap insulation layer and the gate electrode. The second and first insulation layers are selectively eliminated to form a sidewall space(41) on both side surfaces of the gate cap insulation layer and the gate electrode. The gate cap insulation layer is removed to expose the surface of the gate electrode. A semiconductor layer is formed on the exposed gate electrode and the semiconductor substrate. A high density impurity region connected to the low density impurity region is formed in the surface of the semiconductor substrate at both sides of the gate electrode. A silicide process is performed to make the semiconductor layer and the gate electrode react with the semiconductor substrate so that a silicide layer(43) is formed.
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