Method of forming metal connection elements in integrated circuits

摘要

A method of forming metal connection elements in integrated circuits formed on adjacent areas of a wafer includes forming a conductive seed layer on a substrate of the wafer. A first mask covers the integrated circuits and leaves exposed areas of the seed layer overlying predetermined scribe lines used for separation of the integrated circuits. Using the seed layer as a cathode, a metal is deposited by an electrochemical process on exposed areas of the seed layer. The first mask is removed and a second mask is formed, leaving predetermined areas of the seed layer exposed. Using the seed layer as a cathode a metal is deposited on the exposed predetermined areas by an electrochemical process. The second mask is then removed. Connection elements of uniform thickness throughout the substrate are produced with the use of a very thin seed layer.