| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability wherein moisture resistance is superior and property variation is eliminated while realizing structure excellent in manufacture margin. SOLUTION: The copper wiring 2 of a via shape which is embedded in an interlayer insulating film 8 is connected to a gate wiring 1 of the lowest layer. At the outside of the copper wiring 2, a copper wiring 6 of a shield ring 5 is embedded in the interlayer insulating film 8. A silicon nitride film 9 is formed on the copper wirings 2, 6 and the interlayer insulating film 8, and a silicon oxide film 10 is formed on the silicon nitride film 9. A fuse wiring 3 which connects between different copper wirings is embedded in the silicon oxide film 10 which is formed on an upper surface containing the fuse wiring 3 and an aluminum wiring 7. A silicon nitride film 11 is formed on the silicon oxide film 10. The silicon nitride film 11 positioned on the aluminum wiring 7 is removed, and an opening 4 is formed. The silicon nitride film 11 and the aluminum wiring 7 are connected directly. COPYRIGHT: (C)2005,JPO&NCIPI |
