发明名称 |
One-transistor random access memory technology compatible with metal gate process |
摘要 |
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
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申请公布号 |
US7271083(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20040896491 |
申请日期 |
2004.07.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TU KUO-CHI;TZENG KUO-CHYUAN;CHEN CHUNG-YI;SHEN C. Y.;CHEN CHUN-YAO;LEE HSIANG-FAN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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