| 发明名称 |
Low voltage complement ESD protection structures |
| 摘要 |
In an ESD protection device using a SCR-like structure, a vertical device is provided that is highly robust and easily allows the triggering voltage to be adjusted during manufacture. Furthermore it is implementable in complementary form based on PNP and NPN BJT structures, to provide both positive and negative pulse protection.
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| 申请公布号 |
US6690069(B1) |
申请公布日期 |
2004.02.10 |
| 申请号 |
US20020210941 |
申请日期 |
2002.08.02 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORP |
发明人 |
VASHCHENKO VLADISLAV;CONCANNON ANN;HOPPER PETER J.;TER BEEK MARCEL |
| 分类号 |
H01L23/62;H01L27/02;(IPC1-7):H01L23/62 |
主分类号 |
H01L23/62 |
| 代理机构 |
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