发明名称 |
Method of making current-perpendicular-to-the-plane structure magnetoresistive head |
摘要 |
The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.
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申请公布号 |
US7343665(B2) |
申请公布日期 |
2008.03.18 |
申请号 |
US20020281826 |
申请日期 |
2002.10.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAMATA CHIKAYOSHI;EGUCHI SHIN;TANAKA ATSUSHI;FUKUYA TOORU |
分类号 |
G01R33/09;G11B5/187;B05D1/32;G11B5/31;G11B5/39;H01F41/30;H01L43/08;H01L43/12 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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