METHODS OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to form accurately fine patterns by performing a double patterning method. A first material layer having a first thickness is formed on a target layer. A second material layer having a second thickness is formed on the first material layer. A first pattern of a third material layer having line and space patterns is formed on the second material layer. A first pattern of the second material layer is formed by etching the second material layer. A first pattern of the first material layer is formed by etching the exposed first material layer. A second pattern of the second material layer having a fourth thickness and a fifth thickness is formed on the first pattern of the first material layer and the first pattern of the second material layer. A second pattern of the third material layer is formed on the second pattern(40b) of the second material layer. A third pattern of the second material layer is formed by etching the second pattern of the second material layer and the first pattern of the second material layer. A second pattern(3b) of the first material layer is formed by etching the first pattern of the first material layer. The target layer exposed by the etch mask including the second pattern of the first material layer is etched.