| 摘要 |
PURPOSE: An electron beam lithography method is provided, to minimize the time required for the electron beam lithography and the throughput loss and to prevent the generation of butting errors. CONSTITUTION: The method comprises the steps of widening a plurality of stripes(10, 20, 30) dividing the sections performing the electron beam exposure, to allow the stripes neighbored at the interface of stripes to form an overlapped region(15); and performing the electron beam exposure step by step in the strip unit. Preferably the electron beam exposure is performed at least two times step by step with moving the sections where the stripes are overlapped. Preferably the dose of the electron beam at the widened section of the stripes is smaller than that of the stripe section, and more preferably half. |
