发明名称 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
摘要 A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which the density of basal plane dislocations (BPDs) in particular is reduced in an SiC crystal substrate. Irregularities in the surface of the substrate due to this reduction also can be flattened. A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which, prior to forming an epitaxial growth layer on a silicon carbide substrate with an off-axis angle of 1° to 8°, parallel line-shape irregularities, which have an irregularity cross-sectional aspect ratio equal to or greater than the tangent of the off-axis angle of the silicon carbide substrate, are formed in the substrate surface. The irregularites have a height between 0.25 mum and 5 mum.
申请公布号 US2008318359(A1) 申请公布日期 2008.12.25
申请号 US20080139446 申请日期 2008.06.13
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. 发明人 YONEZAWA YOSHIYUKI;TAWARA TAKESHI
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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