GAS INJECTION METHOD FOR UNIFORMLY PROCESSING SEMICONDUCTOR SUBSTRATE IN SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for uniformly processing an upper surface of a semiconductor substrate.SOLUTION: A method for uniformly processing an upper surface of a semiconductor substrate in a semiconductor substrate processing apparatus including a showerhead electrode 103 having gas outlets in discrete sectors of a process exposed surface thereof comprises the steps of: processing the upper surface of the semiconductor substrate by flowing gas through a first discrete sector 1 of the showerhead electrode 103 while preventing gas from flowing through an adjacent discrete sector of the showerhead electrode; and processing the upper surface of the semiconductor substrate by flowing gas through a second discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead. The flow of gas through the first discrete sector and the second discrete sector of the showerhead is time averaged so that the upper surface of the semiconductor substrate is uniformly processed.SELECTED DRAWING: Figure 1