Highly conformal extension doping in advanced multi-gate devices

摘要

A semiconductor device includes a semiconductor material positioned above a substrate and a gate structure positioned above a surface of the semiconductor material, the gate structure covering a non-planar surface portion of the surface. A sidewall spacer is positioned adjacent to the gate structure and includes first dopants having one of an N-type and a P-type conductivity, wherein the sidewall spacer covers an entire sidewall surface of the gate structure and partially covers the surface of the semiconductor material. Source/drain extension regions that include the first dopants are positioned within the non-planar surface portion and in alignment with the sidewall spacer, wherein a concentration of the first dopants within a portion of the sidewall spacer proximate the non-planar surface portion substantially corresponds to a concentration of the first dopants within the source/drain extension regions proximate the non-planar surface portion.

主权项

1. A semiconductor device, comprising:
a semiconductor material positioned above a substrate; a gate structure positioned above a surface of said semiconductor material, said gate structure covering a non-planar surface portion of said surface; a sidewall spacer positioned adjacent to said gate structure and comprising first dopants having one of an N-type and a P-type conductivity, wherein said sidewall spacer covers an entire sidewall surface of said gate structure and partially covers said surface of said semiconductor material; and source/drain extension regions comprising said first dopants and positioned within said non-planar surface portion and in alignment with said sidewall spacer, wherein a concentration of said first dopants within a portion of said sidewall spacer proximate said non-planar surface portion substantially corresponds to a concentration of said first dopants within said source/drain extension regions proximate said non-planar surface portion.