发明名称 Assist Feature for a Photolithographic Process
摘要 A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.
申请公布号 US2016195812(A1) 申请公布日期 2016.07.07
申请号 US201615069244 申请日期 2016.03.14
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 HUANG TAO-MIN;CHEN CHIA-JEN;LEE HSIN-CHANG;SHIH CHIH-TSUNG;YU SHINN-SHENG;CHEN JENG-HORNG;YEN ANTHONY
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A photolithographic technique, the technique comprising: receiving a mask substrate having an absorptive layer and including a printing feature region and an assist feature region defined thereupon, wherein the absorptive layer has a first thickness in the printing feature region and a second, different, thickness in the assist feature region, and exposing the mask to radiation, such that an intensity of radiation reflected by the assist feature region is substantially different from an intensity of radiation reflected by the printing feature region; and using the radiation from the printing feature region and the radiation from assist feature region to expose a workpiece.
地址 Hsin-Chu TW