发明名称 Method, system, and apparatus for preparing substrates and bonding semiconductor layers to substrates
摘要 Embodiments of preparing substrates for subsequent bonding with semiconductor layer are described herein. A substrate may be prepared with one or more chemicals or a sacrificial layer to limit or remove substrate contaminants and reduce substrate surface damage. Other embodiments may be described and claimed.
申请公布号 US9390942(B2) 申请公布日期 2016.07.12
申请号 US201313831067 申请日期 2013.03.14
申请人 Peregrine Semiconductor Corporation 发明人 Domyo Hiroshi;McCafferty Michael;Duvallet Alain;Sato Masaki;O'Brien Christopher;Miscione Anthony Mark;Imthurn George
分类号 H01L21/332;H01L21/322;H01L21/02;H01L29/36;H01L23/31;H01L21/762;H01L23/26 主分类号 H01L21/332
代理机构 Jaquez Land Greenhaus LLP 代理人 Jaquez Land Greenhaus LLP ;Jaquez, Esq. Martin J.
主权项 1. A method for reducing a concentration of particular surface contaminants from a surface of an insulating substrate of a semiconductor architecture prior to bonding with another layer, the insulating substrate being substantially non-diffusive to the particular surface contaminants, the method including: depositing a semiconductor layer on the surface of the insulating substrate surface having a first concentration of the particular surface contaminants; based on the depositing, diffusing a portion of the particular surface contaminants into the semiconductor layer; based on the diffusing, removing the portion of the particular substrate contaminants from the surface of the insulating substrate, and removing the deposited semiconductor layer from the surface of the insulating substrate, thereby obtaining a second concentration of the particular surface contaminants on the surface of the insulating substrate, the second concentration being substantially lower than the first concentration.
地址 San Diego CA US