发明名称 |
Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process |
摘要 |
Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4). |
申请公布号 |
US9390923(B2) |
申请公布日期 |
2016.07.12 |
申请号 |
US201414324000 |
申请日期 |
2014.07.03 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Yoo Jeong Hyun;Lee Hoon Sang;Kong Byungkook |
分类号 |
H01L21/302;H01L21/033;H01L21/3065;H01L21/32 |
主分类号 |
H01L21/302 |
代理机构 |
Moser Taboada |
代理人 |
Moser Taboada ;Taboada Alan |
主权项 |
1. A method of etching a feature in a substrate, comprising:
exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas consisting of nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4). |
地址 |
Santa Clara CA US |