Lithography method and apparatus

摘要

A lithography method and apparatus is disclosed herein. In a described embodiment, the method comprises (i) providing a first mask having an exposure pattern for forming a three dimensional structure; (ii) exposing the first mask to radiation to form the exposure pattern on a radiation-sensitive resist; the exposure pattern defined by irradiated areas and non-irradiated areas of the resist; (ii) providing a second mask; and (iii) during exposure, changing relative positions between the first mask and the second mask to shield selected portions of the irradiated areas from radiation to enable varying depth profiles to be created in the three dimensional structure.

主权项

1. A proximity lithography method comprising
(i) providing a first mask having an exposure pattern for forming a three dimensional structure; (ii) directly exposing the first mask to radiation to form the exposure pattern on a radiation-sensitive resist; the exposure pattern defined by irradiated areas and non-irradiated areas of the resist; (iii) providing a second mask; and (iv) during exposure, changing relative positions between the first mask and the second mask to shield selected portions of the irradiated areas from the radiation and to produce exposure dose grey levels in areas of the radiation-sensitive resist exposed to the radiation to enable features with varying depth profiles, which include a plurality of surfaces arranged substantially parallel to a surface of the resist exposed to the radiation, to be created in the three dimensional structure.