Via patterning using multiple photo multiple etch

摘要

A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.

主权项

1. A method comprising:
forming a dielectric layer; forming a photo resist over the dielectric layer; forming a first mask layer over the photo resist; forming a second mask layer over the first mask layer; performing a first-photo-first-etching to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer; performing a second-photo-second-etching to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer; etching the first mask layer using the second mask layer as an etching mask; and etching the photo resist and the dielectric layer to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.