| 发明名称 |
Manufacturing method of oxide semiconductor device |
| 摘要 |
A manufacturing method of an oxide semiconductor device includes the following steps. A barrier layer is formed on a substrate. An annealing process is performed after the step of forming the barrier layer. A first oxygen treatment is performed on the barrier layer after the annealing process for forming a first oxygen provider layer on the barrier layer. An oxide semiconductor layer is then formed on the first oxygen provider layer. |
| 申请公布号 |
US9412590(B1) |
申请公布日期 |
2016.08.09 |
| 申请号 |
US201514840055 |
申请日期 |
2015.08.31 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsu Chia-Fu;Wu Chun-Yuan |
| 分类号 |
H01L21/321;H01L21/4763;H01L21/02;H01L29/66;H01L21/28;H01L21/283 |
主分类号 |
H01L21/321 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A manufacturing method of an oxide semiconductor device, comprising:
forming a barrier layer on a substrate; performing an annealing process after the step of forming the barrier layer; performing a first oxygen treatment on the barrier layer after the annealing process for forming a first oxygen provider layer on the barrier layer, wherein the first oxygen treatment comprises an ozone cleaning treatment; and forming an oxide semiconductor layer on the first oxygen provider layer. |
| 地址 |
Hsin-Chu TW |
