发明名称 Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module
摘要 Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.
申请公布号 US9414512(B2) 申请公布日期 2016.08.09
申请号 US201013503126 申请日期 2010.10.19
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 Nagatomo Yoshiyuki;Akiyama Kazuhiro;Tonomura Hiroshi;Terasaki Nobuyuki;Kuromitsu Yoshirou
分类号 H05K7/02;H05K13/00;H05K7/20;H01L23/373;H01L23/473;C04B35/645;C04B37/02;H01L21/48 主分类号 H05K7/02
代理机构 Locke Lord LLP 代理人 Locke Lord LLP ;Armstrong, IV James E.;Matross Brian S.
主权项 1. A power module substrate comprising: a ceramic substrate composed of AlN or Si3N4; and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate; wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in said metal plate, an Ag concentration in said metal plate in the vicinity of the interface with said ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in said metal plate in the vicinity of the interface with said ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass, an oxygen high concentration part having an oxygen concentration two or more times the oxygen concentration in the crystal grain of said ceramic substrate is formed in the bonding interface between said metal plate and said ceramic substrate, and the thickness of said oxygen high concentration part is less than or equal to 4 nm.
地址 Tokyo JP