发明名称 Trapped sacrificial structures and methods of manufacturing same using thin-film encapsulation
摘要 Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
申请公布号 US9422149(B2) 申请公布日期 2016.08.23
申请号 US201414532723 申请日期 2014.11.04
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 Quevy Emmanuel P.;Nervegna Louis;Hui Jeremy R.
分类号 B81B3/00;B81B7/00;B81C1/00;G01N27/22 主分类号 B81B3/00
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A trapped sacrificial structure, comprising: a MEMS region disposed over a substrate, the MEMS region including a MEMS structural layer; a portion of a first sacrificial layer and a portion of a second sacrificial layer disposed over the MEMS structural layer; an upper microshell layer disposed over the portions of the first and second sacrificial layers, the first sacrificial layer portion and/or a second sacrificial layer portion being configured to form at least one trapped sacrificial structure under the upper microshell layer; and one or more upper release holes defined in the upper microshell layer.
地址 Shanghai CN