发明名称 |
Trapped sacrificial structures and methods of manufacturing same using thin-film encapsulation |
摘要 |
Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures. |
申请公布号 |
US9422149(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201414532723 |
申请日期 |
2014.11.04 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Quevy Emmanuel P.;Nervegna Louis;Hui Jeremy R. |
分类号 |
B81B3/00;B81B7/00;B81C1/00;G01N27/22 |
主分类号 |
B81B3/00 |
代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
主权项 |
1. A trapped sacrificial structure, comprising:
a MEMS region disposed over a substrate, the MEMS region including a MEMS structural layer; a portion of a first sacrificial layer and a portion of a second sacrificial layer disposed over the MEMS structural layer; an upper microshell layer disposed over the portions of the first and second sacrificial layers, the first sacrificial layer portion and/or a second sacrificial layer portion being configured to form at least one trapped sacrificial structure under the upper microshell layer; and one or more upper release holes defined in the upper microshell layer. |
地址 |
Shanghai CN |