发明名称 Semiconductor light trap device
摘要 Buried structures for silicon devices which alter light paths and thereby form light traps. The lights traps couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device.
申请公布号 US9431554(B2) 申请公布日期 2016.08.30
申请号 US201514624679 申请日期 2015.02.18
申请人 Infineon Technologies Dresden GmbH 发明人 Kautzsch Thoralf
分类号 H01L31/02;H01L31/0232;H01L31/0352;H01L31/0236 主分类号 H01L31/02
代理机构 Schiff Hardin LLP 代理人 Schiff Hardin LLP
主权项 1. A device comprising: a semiconductor structure having an exposed surface to be exposed to light rays; a photoelectrically active portion located beneath the exposed surface within the semiconductor structure; and an internal structure located beneath the active photoelectrically portion, the internal structure having an interface surface generally parallel to the exposed surface at which total internal reflection of light rays occurs such that at least some the light rays are redirected toward the photoelectrically active portion.
地址 Dresden DE