Dummy gate structure and methods thereof

摘要

A structure and method for implementation of dummy gate structures within multi-gate device structures includes a semiconductor device including an isolation region that separates a first and second active region. The first active region is adjacent to a first side of the isolation region and the second active region is adjacent to a second side of the isolation region. A device including a source, a drain, and a gate is formed within the first active region. One of the source and drain regions are disposed adjacent to the isolation region. A dummy gate is formed at least partially over the isolation region and adjacent to the one of the source and drain regions. In various examples, the gate includes a first dielectric layer having a first thickness and the dummy gate includes a second dielectric layer having a second thickness greater than the first thickness.

主权项

1. A semiconductor device, comprising:
an isolation region that separates a first active region from a second active region, wherein the first active region is adjacent to a first side of the isolation region, and wherein the second active region is adjacent to a second side of the isolation region; a device including a source region, a drain region, and a gate formed within the first active region, wherein the source and drain regions are disposed adjacent to and on either side of the gate and one of the source and drain regions is disposed adjacent to the first side of the isolation region; and a dummy gate formed at least partially over the isolation region and adjacent to the one of the source and drain regions; wherein the gate includes a first dielectric layer having a first thickness, and wherein the dummy gate includes a second dielectric layer having a second thickness greater than the first thickness.