发明名称 |
Composite substrate of gallium nitride and metal oxide |
摘要 |
The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia. |
申请公布号 |
US9431488(B2) |
申请公布日期 |
2016.08.30 |
申请号 |
US201514811799 |
申请日期 |
2015.07.28 |
申请人 |
SixPoint Materials, Inc.;Seoul Semiconductor Co., Ltd. |
发明人 |
Hashimoto Tadao |
分类号 |
H01L21/311;H01L21/66;H01L29/20;H01L21/02;H01L29/32 |
主分类号 |
H01L21/311 |
代理机构 |
Strategic Innovation IP Law Offices, P.C. |
代理人 |
Strategic Innovation IP Law Offices, P.C. |
主权项 |
1. A method comprising:
a. forming a protective metal oxide layer upon a face of a group III-nitride wafer prior to loading the wafer in a device fabrication reactor,
i. wherein the group III-nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, andii. wherein
1. the protective metal oxide layer is capable of being etched by a chemical in the device fabrication reactor,2. the protective metal oxide layer is sufficiently thick to protect the face from mechanical, physical and/or chemical damage during storage, transport and/or handling of the wafer, and3. the protective metal oxide layer is sufficiently thin to be removed in the device fabrication reactor, and b. storing said wafer. |
地址 |
Buelton CA US |