发明名称 BANDGAP REFERENCE CIRCUIT
摘要 A bandgap reference circuit incorporates first, second, and third current sources, an operational amplifier coupled to the second and the third current sources, a voltage divider, a first resistor, and first, second, and third bipolar transistors. The second bipolar transistor has a base configured to receive a bias voltage from the voltage divider. The third bipolar transistor has a base and a collector electrically connected to the ground voltage. The first resistor is coupled between the third current source and the third bipolar transistor.
申请公布号 US2016252923(A1) 申请公布日期 2016.09.01
申请号 US201514632035 申请日期 2015.02.26
申请人 Elite Semiconductor Memory Technology Inc. 发明人 NIEN Shu-Han
分类号 G05F3/26 主分类号 G05F3/26
代理机构 代理人
主权项 1. A bandgap reference circuit, comprising: first, second, and third current sources; an operational amplifier electrically connected to the first, second, and third current sources; a first bipolar transistor having a base, an emitter, and a collector, the emitter electrically connected to the first current source, the base and the collector coupled to a ground voltage; a voltage divider electrically connected between the emitter of the to first bipolar transistor, wherein the voltage divider provides a bias voltage proportional to a base-emitter voltage of the first bipolar transistor; a second bipolar transistor having a base, an emitter, and a collector, the base configured to receive the bias voltage, the emitter electrically connected to the second current source, and the collector electrically connected to the ground voltage; a third bipolar transistor having a base, an emitter, and a collector, the base and the collector electrically connected to the ground voltage; and a first resistor electrically connected between the third current source and the emitter of the third bipolar transistor.
地址 Hsinchu TW