| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage unit capable of reducing power consumption.SOLUTION: The semiconductor storage unit includes: a first well 21 of a first conductivity type; a memory cell array 111 which is formed above the first well 21 including a first memory cell transistor MT; and a first wiring 36 (BL) connected to the first memory cell transistor MT. When deleting data on the first memory cell transistor, a first positive voltage (VERA, 24 V) is applied to the first wiring, and the electrical potential of the first well 21 is boosted to a second positive voltage (n-well electrical potential).SELECTED DRAWING: Figure 3 |
