发明名称 Pixel unit, array substrate and manufacturing method thereof, and display device
摘要 A pixel unit comprising a thin film transistor, a pixel electrode and a common electrode is provided. The common electrode and the pixel electrode form a capacitor. The pixel electrode is integrated with a drain of the thin film transistor. An array substrate comprising the pixel unit, a manufacturing method of the array substrate and a display device comprising the array substrate are also provided. In the pixel unit provided by the present invention, since the pixel electrode is integrated with the drain of the thin film transistor, it is not required to provide connection vias, so the manufacturing cost of an array substrate comprising the pixel unit is reduced.
申请公布号 US9443983(B2) 申请公布日期 2016.09.13
申请号 US201414422414 申请日期 2014.05.27
申请人 BOE TECHNOLOGY GROUP CO., LTD.;ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. 发明人 Sun Jian;Lei Dong;An Seongjun;Ryu Bongyeol
分类号 H01L29/12;H01L29/786;G02F1/1368;H01L27/12 主分类号 H01L29/12
代理机构 Nath, Goldberg & Meyer 代理人 Nath, Goldberg & Meyer ;Goldberg Joshua B.;Protigal Stanley N.
主权项 1. A pixel unit, comprising a thin film transistor, a pixel electrode and a common electrode, wherein the common electrode and the pixel electrode forming a capacitor, and the pixel electrode is integrated with a drain of the thin film transistor, wherein the pixel unit further comprises a buffer layer, and a first via and a second via penetrating through the buffer layer, wherein the buffer layer covers a source of the thin film transistor, the drain of the thin film transistor and the pixel electrode, the active layer of the thin film transistor is located above the buffer layer, the source of the thin film transistor is connected to the active layer of the thin film transistor through the first via, and the pixel electrode is connected to the active layer of the thin film transistor through the second via.
地址 Beijing CN