发明名称 High speed comparator
摘要 An apparatus includes an input difference determination circuit configured to determine a digital value based on a difference between first and second input signals, and a charge pump configured to provide a supply voltage to the first and second transistors to determine the digital value. The input difference determination circuit includes a first transistor and a second transistor cross-coupled to each other. A method includes generating a voltage using a charge pump, providing the voltage to an input difference determination circuit, and determining a digital value based on a difference between first and second input signals by the input difference determination circuit.
申请公布号 US9531360(B1) 申请公布日期 2016.12.27
申请号 US201514694970 申请日期 2015.04.23
申请人 MARVELL INTERNATIONAL LTD. 发明人 Zhang Tao
分类号 H03K5/22;H03K5/125 主分类号 H03K5/22
代理机构 代理人
主权项 1. An apparatus comprising: an input difference determination circuit configured to determine a digital value based on a difference between first and second input signals, the input difference determination circuit including first, second, third, and fourth transistors, the first transistor and the second transistor cross-coupled to each other and the third and fourth transistors coupled to a first supply voltage, wherein: a gate of the third transistor is coupled to a gate of the first transistor,a gate of the fourth transistor is coupled to a gate of the second transistor,a drain of the fourth transistor is coupled to a first output node, anda drain of the third transistor is coupled to a second output node; and a charge pump configured to provide a second supply voltage to the first and second transistors to determine the digital value; and a reset circuit configured to receive a reset signal, to reset the first and second output nodes when the reset signal has a first value, and to provide the first supply voltage to the charge pump when the reset signal has the first value, wherein the first and second transistors are configured to have transconductance values that are greater than those of the third and fourth transistors, respectively.
地址 Hamilton BM