| 摘要 |
PURPOSE:To easily correct a defect and to obtain a perfect photomask pattern, by forming a film becoming black upon irradiation of high energy beams, on a region including a deficiency type defect of a photomask pattern, and then irradiating the region with the high energy beams. CONSTITUTION:To correct a photomask obtained by forming a pattern of a metal film 2 on a glass substrate 1 containing a deficiency type defect 3, a mixture 4 of a binder, such as polyvinylalcohol, containing a spiropyran or fluoran derivative leuco dye and a phenolic compound, such as bisphenol A, or a stearic acid or the like, and an orgaic acid heavy metal salt, such as Ni, Co, or Cu salt and an organic reducing agent, or the like is coated on all the surface of the substrate 1. The region of the defect 3 is irradiated with high energy beams 5 to form a region 6 with the mixture blackened. A nonblackened layer 4 may be removed, but even if it is left as it is, the photomask, is used without any trouble for manufacture of semiconductor devices. |
