发明名称 |
FABRICATION OF DEVICES WITH A SILICON OXIDE REGION |
摘要 |
Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. |
申请公布号 |
WO8600753(A1) |
申请公布日期 |
1986.01.30 |
申请号 |
WO1985US01278 |
申请日期 |
1985.07.03 |
申请人 |
AMERICAN TELEPHONE & TELEGRAPH COMPANY |
发明人 |
CHANDROSS, EDWIN, ARTHUR;DEAN, ROBERT, EARL;SMOLINSKY, GERALD |
分类号 |
C23C16/40;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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