发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent a malfunction due to the change in the ambient temperature during the actual operation by a method wherein, before a wafer is divided, a chip at a prescribed part on a second circle or a third circle as counted from an outermost circle is treated as a reject intentionally. CONSTITUTION:At a chip 2a which is located on a second circle as counted from a chip 1 at an outermost circle of a wafer, an Al electrode is not formed and the chip is treated as a reject intentionally. When chips are divided, some chips are not divided perfectly because the size of chips is not formed normally at the chip 2a and the circle 1. Because the electrode is not formed on the chip 2a and this chip is treated as a reject, this chip is removed at the test. As a result, a device can be structured normally; a malfunction does not occur even when the chip is influenced by the change in the temperature during the actual operation.</p>
申请公布号 JPS6396938(A) 申请公布日期 1988.04.27
申请号 JP19860242606 申请日期 1986.10.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 ODA TAKESHI;INOUE HIROSHI;MITARAI GORO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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