SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To easily form a Schottky FET which can endure high temperature and has a large contact potential by forming a Schottky contact of a specific material. CONSTITUTION:A Sohottky contact 12' which becomes a gate electrode is formed of W-Si-Ge of Si-Ge having W of high melting point metal on an N-type GaAs substrate 11, and a Ti-Au electrode 15 for facilitating a bonding is formed thereon. With the Schottky electrode as a mask a source and a drain are formed in a self-aligning manner. Then, a Schottky FET which can endure a high temperature and has a large contact potential can be easily formed.