| 摘要 |
An inductively coupled plasma apparatus which is capable of performing etching processing steps in a stable manner and consecutively. Shield plates are provided in a reaction tube in the vicinity of an inner surface thereof. The shield plates prevent a conductive material generated by etching a wafer from sticking to the overall inner surface of the reaction tube. A portion of the inner wall covered by the shield plate, that is, a region where no conductive material is deposited serves as a high-frequency window, through which high-frequency electric power is efficiently fed from a coil antenna into the reaction tube. The conductive materials thus stuck separately from each other exhibit the Faraday shield effect, thereby stabilizing plasma potential.
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