| 摘要 |
<p>PURPOSE:To provide the wafer rotating angle correcting method with which the rotating angle can be-easily corrected in a highly precise manner. CONSTITUTION:Using the rotating angle correction method for a wafer l provided with an element forming region which is enclosed by a straight line and also surrounded by a plurality of semiconductor elements 10, at least two points, on the same line or on the two boundary lines, which are almost in parallel with each other from among the boundary lines 4 between the element forming region 2 and the non-element forming region 3 of the wafer l, are read out by an optical read-out device. Based on the image obtained by the optical lead- out device, the position of each boundary line 4 for the origin O of the coordinate axis, which was set in advance, is measured respectively. The deviation of rotating angle of the wafer 1 is computed by the above-mentioned measurement, the rotating angle is corrected by rotatory moving the wafer 1 and the deviation is removed.</p> |
