发明名称 |
ELECTRONIC DEVICES INCLUDING ELECTRODES COMPRISING CHROMIUM NITRIDE AND A METHOD OF MANUFACTURING SUCH DEVICES |
摘要 |
A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37, 39, 40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of properties for use as an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor. |
申请公布号 |
WO9812754(A2) |
申请公布日期 |
1998.03.26 |
申请号 |
WO1997IB01099 |
申请日期 |
1997.09.12 |
申请人 |
PHILIPS ELECTRONICS N.V.;PHILIPS NORDEN AB |
发明人 |
MCGARVEY, BRIAN, PATRICK;DEANE, STEVEN, CHARLES;FRENCH, IAN, DOUGLAS;TRAINOR, MICHAEL, JOSEPH |
分类号 |
H01L29/872;H01L21/77;H01L21/84;H01L27/12;H01L29/45;H01L29/47;H01L29/49;H01L29/786;H01L29/861 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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