| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical junction type field effect transistor having a structure that uses SiC, which has a high channel carrier mobility and a small on-resistance. SOLUTION: On a substrate 8 having a (0001) plane composed of an n<+> -type 4H-SiC as a major plane, a drain layer 9 composed of an n-type SiC and a gate layer 10 composed of a p-type SiC are formed. On the part of the gate layer 10, a trench 30 which has a thickness of 1μm in a direction, wherein current is constricted (x-axis direction) and completely penetrates the gate layer 10 is formed, and a channel layer 12 which is composed of an n-type SiC single crystal and completely fills the trench 30 is formed on the surface of the gate layer 10 near the trench 30 into a T-shape as a whole. On the surface of the channel layer 12, a source layer 13 composed of the n-type SiC single crystal is formed, and on the surface of the gate layer 10, a contact layer 11 composed of the p-type SiC single crystal is formed. Each layer is formed by epitaxial growth.
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